CS60N04A4 mosfet equivalent, silicon n-channel power mosfet.
l Rds(on) =8.5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
VDSS
ID.
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